Parameters required to simulate electric characteristics of...

Journal of Applied Physics 2004 Vol. 96; Iss. 10

Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC

Kagamihara, Sou, Matsuura, Hideharu, Hatakeyama, Tetsuo, Watanabe, Takatoshi, Kushibe, Mitsuhiro, Shinohe, Takashi, Arai, Kazuo
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Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1798399
File:
PDF, 332 KB
english, 2004
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