Enhanced etching of Si(100) by neutral chlorine beams with...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 1992 / 9 Vol. 10; Iss. 5

Enhanced etching of Si(100) by neutral chlorine beams with kinetic energies up to 6 eV

Campos, Francis X.
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Volume:
10
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.586192
Date:
September, 1992
File:
PDF, 854 KB
english, 1992
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