Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics
Leonard, E., Arzel, L., Tomassini, M., Zabierowski, P., Fuertes Marrón, D., Barreau, N.Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4891478
Date:
August, 2014
File:
PDF, 994 KB
english, 2014