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X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy
Q. Liu, A. Lindner, F. Scheffer, W. Prost, F. J. TegudeYear:
1994
Language:
english
DOI:
10.1063/1.356266
File:
PDF, 1.11 MB
english, 1994