[IEEE 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2011) - Incheon, Korea (South) (2011.07.4-2011.07.7)] 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Drain bias stress-induced degradation in amorphous silicon thin film transistors with negative gate bias

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