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Fabrication and characterization of InAlN/GaN-based double-channel high electron mobility transistors for electronic applications
Xue, JunShuai, Zhang, JinCheng, Zhang, Kai, Zhao, Yi, Zhang, LinXia, Ma, XiaoHua, Li, XiaoGang, Meng, FanNa, Hao, YueVolume:
111
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4729030
File:
PDF, 602 KB
english, 2012