[IEEE 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 - Alpbach, Austria (17-22 Sept. 2000)] 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) - Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes
Hazdra, P., Brand, K., Vobecky, J.Year:
2000
Language:
english
DOI:
10.1109/.2000.924109
File:
PDF, 389 KB
english, 2000