Amorphous In-Ga-Zn-O thin-film transistors prepared by...

Journal of the Society for Information Display 2013 / 12 Vol. 21; Iss. 12

Amorphous In-Ga-Zn-O thin-film transistors prepared by magnetron sputtering using Kr and Xe instead of Ar

Goto, Tetsuya, Sugawa, Shigetoshi, Ohmi, Tadahiro
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Volume:
21
Language:
english
Journal:
Journal of the Society for Information Display
DOI:
10.1002/jsid.210
Date:
December, 2013
File:
PDF, 1.83 MB
english, 2013
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