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Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV
Lau, W. M., Bello, I., Feng, X., Huang, L. J., Fuguang, Qin, Zhenyu, Yao, Zhizhang, Ren, Lee, S.-T.Volume:
70
Year:
1991
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.350177
File:
PDF, 1.01 MB
english, 1991