Unintentionally doped n-type Al[sub 0.67]Ga[sub 0.33]N epilayers
Nakarmi, M. L., Nepal, N., Lin, J. Y., Jiang, H. X.Volume:
86
Year:
2005
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1954875
File:
PDF, 304 KB
english, 2005