[IEEE Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - Kyoto, Japan (June 14-16, 2005)] Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. - 25% drive current improvement for p-type multiple gate FET (MuGFET) devices by the introduction of recessed Si/sub 0.8/Ge/sub 0.2/ in the source and drain regions.
Verheyen, P., Collaert, N., Rooyackers, R., Loo, R., Shamiryan, D., De Keersgieter, A., Eneman, G., Leys, F., Dixit, A., Goodwin, M., Yim, Y.S., Caymax, M., De Meyer, K., Absil, P., Jurczak, M., BieseYear:
2005
Language:
english
DOI:
10.1109/.2005.1469264
File:
PDF, 509 KB
english, 2005