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[IEEE 2009 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST) - Mumbai, India (2009.06.1-2009.06.2)] 2009 2nd International Workshop on Electron Devices and Semiconductor Technology - Modified surface potential based current modeling of thin silicon channel double gate SOI FinFETs
Yadav, Rohit, Prakash, Robin Paul, Bose, S. C.Year:
2009
Language:
english
DOI:
10.1109/edst.2009.5166123
File:
PDF, 461 KB
english, 2009