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Correlation between channel mobility and shallow interface traps in SiC metal–oxide–semiconductor field-effect transistors
Suzuki, Seiji, Harada, Shinsuke, Kosugi, Ryoji, Senzaki, Junji, Cho, Won-ju, Fukuda, KenjiVolume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1513210
File:
PDF, 345 KB
english, 2002