Characterization of carrier concentration and stress in GaAs metal-semiconductor field-effect transistor by cathodoluminescence spectroscopy
Yoshikawa, M., Iwagami, K., Ishida, H.Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368238
File:
PDF, 783 KB
english, 1998