Electron capture and emission properties of interface...

Journal of Applied Physics 2008 Vol. 103; Iss. 3

Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO[sub 2]/4H-SiC

Chen, X. D., Dhar, S., Isaacs-Smith, T., Williams, J. R., Feldman, L. C., Mooney, P. M.
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Volume:
103
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2837028
File:
PDF, 447 KB
english, 2008
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