{110}-facets formation by hydrogen thermal etching on sidewalls of Si and strained-Si fin structures
Tezuka, Tsutomu, Hirashita, Norio, Moriyama, Yoshihiko, Sugiyama, Naoharu, Usuda, Koji, Toyoda, Eiji, Murayama, Ken, Takagi, Shin-ichiVolume:
92
Year:
2008
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.2924281
File:
PDF, 535 KB
english, 2008