[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Electrical characteristics and reliability of extended drain voltage NMOS devices with multi-RESURF junction
Vashchenko, V.A., Brisbin, D., Linclorfer, P., Chaparala, P., Hopper, P.Year:
2005
Language:
english
DOI:
10.1109/relphy.2005.1493149
File:
PDF, 1.18 MB
english, 2005