High Temperature Ion Implantation and Activation Annealing...

Materials Science Forum 2012 / 5 Vol. 717-720

High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices

Tezuka, Kazuo, Tsuyuki, Tatsurou, Shimizu, Saburou, Nakamata, Shinichi, Tsuji, Takashi, Iwamuro, Noriyuki, Harada, Shinsuke, Fukuda, Kenji, Kimura, Hiroshi
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Volume:
717-720
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.717-720.821
Date:
May, 2012
File:
PDF, 426 KB
english, 2012
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