Growth and characterization of SiC epitaxial layers on Si-...

Journal of Applied Physics 2005 Vol. 98; Iss. 10

Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

Ramaiah, Kodigala Subba, Bhat, I., Chow, T. P., Kim, J. K., Schubert, E. F., Johnstone, D., Akarca-Biyikli, S.
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Volume:
98
Year:
2005
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2132520
File:
PDF, 513 KB
english, 2005
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