Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation
Usov, I. O., Suvorova, A. A., Sokolov, V. V., Kudryavtsev, Y. A., Suvorov, A. V.Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371651
File:
PDF, 417 KB
english, 1999