Transient enhanced diffusion of aluminum in SiC during high...

Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

Usov, I. O., Suvorova, A. A., Sokolov, V. V., Kudryavtsev, Y. A., Suvorov, A. V.
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Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371651
File:
PDF, 417 KB
english, 1999
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