Hysteresis caused by defects in buffer layer of...

Integrated Ferroelectrics 2001 / 01 Vol. 40; Iss. 1-5

Hysteresis caused by defects in buffer layer of metal-ferroelectric-insulator-semiconductor (MFIS) devices

Kang, Dongseok, Ahn, Soonhong, Roh, Yonghan, Jun, Sungjin, Lee, Jaichan, Jung, Donggeun
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Volume:
40
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584580108010848
Date:
January, 2001
File:
PDF, 388 KB
english, 2001
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