Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 4
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Correlation of Raman, electrical, and optical properties of high-κ, atomic layer deposited Al-doped TiO[sub 2]
Haspert, Lauren C., Banerjee, Parag, Henn-Lecordier, Laurent, Rubloff, Gary W.Volume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3610970
File:
PDF, 694 KB
english, 2011