Structure and strain relaxation effects of defects in...

Journal of Applied Physics 2014 / 09 Vol. 116; Iss. 10

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

Rhode, S. L., Fu, W. Y., Moram, M. A., Massabuau, F. C.-P., Kappers, M. J., McAleese, C., Oehler, F., Humphreys, C. J., Dusane, R. O., Sahonta, S.–L.
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4894688
Date:
September, 2014
File:
PDF, 2.29 MB
english, 2014
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