Electron spin resonance of inherent and process induced...

Electron spin resonance of inherent and process induced defects near the Si/SiO2 interface of oxidized silicon wafers

Poindexter, Edward H.
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Volume:
6
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.575701
Date:
May, 1988
File:
PDF, 781 KB
english, 1988
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