In situ measurement of the ion incidence angle dependence...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2006 Vol. 24; Iss. 6

In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors

Belen, Rodolfo Jun, Gomez, Sergi, Kiehlbauch, Mark, Aydil, Eray S.
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Volume:
24
Year:
2006
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.2362725
File:
PDF, 1.35 MB
english, 2006
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