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[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - Accumulation region length impact on 0.18µm CMOS fully-compatible lateral power MOSFETs with Shallow Trench Isolation
Roig, J., Moens, P., Bauwens, F., Medjahed, D., Mouhoubi, S., Gassot, P.Year:
2009
Language:
english
DOI:
10.1109/ispsd.2009.5158008
File:
PDF, 661 KB
english, 2009