Impact ionization thresholds in GexSi1−x alloys and...

Impact ionization thresholds in GexSi1−x alloys and strained layers

Czajkowski, I. K., Allam, J., Adams, A. R., Gell, M. A.
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Volume:
71
Year:
1992
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.350897
File:
PDF, 996 KB
english, 1992
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