Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy
Chung, Sung-Yong, Jin, Niu, Pavlovicz, Ryan E., Berger, Paul R., Yu, Ronghua, Fang, Zhaoqiang, Thompson, Phillip E.Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1755436
File:
PDF, 331 KB
english, 2004