Structure, bonding, and passivation of single...

Journal of Applied Physics 2014 / 11 Vol. 116; Iss. 17

Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces

Ettisserry, D. P., Goldsman, N., Akturk, A., Lelis, A. J.
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Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4900981
Date:
November, 2014
File:
PDF, 1.55 MB
english, 2014
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