Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1995 / 3 Vol. 13; Iss. 2
Gate oxide degradation during polysilicon etching in a parallel-plate plasma-type etcher
Lee, Dong-DukVolume:
13
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.587954
Date:
March, 1995
File:
PDF, 364 KB
english, 1995