Accuracy of photocarrier radiometric measurement of...

Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

Li, Bincheng, Shaughnessy, Derrick, Mandelis, Andreas, Batista, Jerias, Garcia, Jose
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Volume:
96
Year:
2004
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1755847
File:
PDF, 438 KB
english, 2004
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