Raman scattering from fully strained Ge[sub 1−x]Sn[sub x] (x≤0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy
Rojas-López, M., Navarro-Contreras, H., Desjardins, P., Gurdal, O., Taylor, N., Carlsson, J. R. A., Greene, J. E.Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368286
File:
PDF, 363 KB
english, 1998