High-quality highly strained InGaAs quantum wells grown on InP using (InAs)[sub n](GaAs)[sub 0.25] fractional monolayer superlattices
Jourba, S., Gendry, M., Marty, O., Pitaval, M., Hollinger, G.Volume:
75
Year:
1999
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.124328
File:
PDF, 427 KB
english, 1999