Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC
Chen, Bin, Matsuhata, Hirofumi, Sekiguchi, Takashi, Kinoshita, Akimasa, Ichinoseki, Kyouichi, Okumura, HajimeVolume:
100
Year:
2012
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3700963
File:
PDF, 1.08 MB
english, 2012