Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2 grid
Badoz, P. A., Bensahel, D., Guérin, L., Puissant, C., Regolini, J. L.Volume:
56
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.102949
File:
PDF, 594 KB
english, 1990