Permeable base transistor fabrication by selective...

Permeable base transistor fabrication by selective epitaxial growth of silicon on a submicrometer WSi2 grid

Badoz, P. A., Bensahel, D., Guérin, L., Puissant, C., Regolini, J. L.
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Volume:
56
Year:
1990
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.102949
File:
PDF, 594 KB
english, 1990
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