Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions
Osterberg, Daniel D., Youngsman, John, Ubic, Rick, Reimanis, Ivar E., Butt, Darryl P., Hay, R.Language:
english
Journal:
Journal of the American Ceramic Society
DOI:
10.1111/jace.12465
Date:
June, 2013
File:
PDF, 539 KB
english, 2013