Recrystallization Kinetics of 3C Silicon Carbide Implanted...

  • Main
  • 2013 / 06
  • Recrystallization Kinetics of 3C Silicon Carbide Implanted...

Recrystallization Kinetics of 3C Silicon Carbide Implanted with 400 keV Cesium Ions

Osterberg, Daniel D., Youngsman, John, Ubic, Rick, Reimanis, Ivar E., Butt, Darryl P., Hay, R.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Language:
english
Journal:
Journal of the American Ceramic Society
DOI:
10.1111/jace.12465
Date:
June, 2013
File:
PDF, 539 KB
english, 2013
Conversion to is in progress
Conversion to is failed