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Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap
Hasanuzzaman, Mohammad, Haddara, Yaser M., Knights, Andrew P.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4751267
File:
PDF, 1.44 MB
english, 2012