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Electrical and optical properties of hydrogenated amorphous silicon-germanium (a-Si1−xGexH) films prepared by reactive ion beam sputtering
Bhan, Mohan Krishan, Malhotra, L. K., Kashyap, Subhash C.Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.344243
File:
PDF, 1.12 MB
english, 1989