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Characterization of SnTe-doped InP grown by solid-source atomic layer molecular beam epitaxy
Postigo, P. A., Dotor, M. L., Garcı́a, F., Golmayo, D., Briones, F.Volume:
89
Year:
2001
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1337599
File:
PDF, 315 KB
english, 2001