Electrical and structural properties of Mg-doped InxGa1−xN...

Materials Science and Engineering: B 2015 / 03 Vol. 193

Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Kuo, Dong-Hau, Tuan, Thi Tran Anh, Li, Cheng-Che, Yen, Wei-Chun
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Volume:
193
Language:
english
Journal:
Materials Science and Engineering: B
DOI:
10.1016/j.mseb.2014.11.005
Date:
March, 2015
File:
PDF, 2.02 MB
english, 2015
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