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Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperatures
Mouneyrac, David, Hartnett, John G., Le Floch, Jean-Michel, Tobar, Michael E., Cros, Dominique, Krupka, JerzyVolume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3514009
File:
PDF, 972 KB
english, 2010