Controlling the properties of InGaAs quantum dots by...

Applied Physics Letters 2005 Vol. 86; Iss. 11

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Mokkapati, S., Lever, P., Tan, H. H., Jagadish, C., McBean, K. E., Phillips, M. R.
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Volume:
86
Year:
2005
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1875745
File:
PDF, 473 KB
english, 2005
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