Low-temperature growth of SiC thin films on Si and 6H–SiC...

Applied Physics Letters 1995 Vol. 66; Iss. 23

Low-temperature growth of SiC thin films on Si and 6H–SiC by solid-source molecular beam epitaxy

Fissel, A., Schröter, B., Richter, W.
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Volume:
66
Year:
1995
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.113716
File:
PDF, 438 KB
english, 1995
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