Improved accuracy in monitoring Si monolayer incorporation...

Improved accuracy in monitoring Si monolayer incorporation in GaAs during molecular beam epitaxy

Däweritz, L.
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Volume:
16
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581205
Date:
May, 1998
File:
PDF, 1024 KB
english, 1998
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