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Effect of intrinsic defects on the electron mobility of gallium arsenide grown by molecular beam epitaxy and metal organic chemical vapor deposition
Jorio, Anouar, Sellami, Lamia, Aubin, Marcel, Carlone, CosmoVolume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1479746
File:
PDF, 336 KB
english, 2002