Post Hard Breakdown Conduction in MOS Capacitors With...

IEEE Electron Device Letters 2008 / 04 Vol. 29; Iss. 4

Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric

Avellan, A., Jakschik, S., Tippelt, B., Kudelka, S., Krautschneider, W.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.917627
Date:
April, 2008
File:
PDF, 338 KB
english, 2008
Conversion to is in progress
Conversion to is failed