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Post Hard Breakdown Conduction in MOS Capacitors With Silicon and Aluminum Oxide as Dielectric
Avellan, A., Jakschik, S., Tippelt, B., Kudelka, S., Krautschneider, W.Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.917627
Date:
April, 2008
File:
PDF, 338 KB
english, 2008