Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures
1989 / 7 Vol. 7; Iss. 4
Reduction of GaAs metal–semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth
Hitchens, W. R.Volume:
7
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.584625
Date:
July, 1989
File:
PDF, 457 KB
english, 1989