Investigations of the SiO2/Si interface. I. Oxidation of a...

Journal of Applied Physics 1989 Vol. 65; Iss. 10

Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiation

Nakazawa, M., Kawase, S., Sekiyama, H.
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Volume:
65
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343323
File:
PDF, 549 KB
english, 1989
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