Interfacial reaction and Fermi level movement induced by...

Physical Review B 2000 / 4 Vol. 61; Iss. 16

Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN

Kim, Min-Ho, Lee, Sung-Nam, Huh, Chul, Park, Serng Yerl, Han, Jeong Yeul, Seo, Jae Myung, Park, Seong-Ju
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Volume:
61
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.61.10966
Date:
April, 2000
File:
PDF, 132 KB
english, 2000
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