Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers
Tasco, V., Campa, A., Tarantini, I., Passaseo, A., González-Posada, F., Redondo-Cubero, A., Lorenz, K., Franco, N., Muñoz, E.Volume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3093700
File:
PDF, 830 KB
english, 2009